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| PD - 95772A AUTOMOTIVE MOSFET IRFR120ZPBF IRFU120ZPbF HEXFET(R) Power MOSFET D Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 100V G S RDS(on) = 190m ID = 8.7A Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D-Pak IRFR120Z I-Pak IRFU120Z Absolute Maximum Ratings Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM Max. 8.7 6.1 35 35 0.23 20 Units A W W/C V mJ A mJ PD @TC = 25C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energyd Single Pulse Avalanche Energy Tested Value EAS (Tested ) IAR EAR TJ TSTG Avalanche CurrentA Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw h 18 20 See Fig.12a, 12b, 15, 16 -55 to + 175 g C 300 (1.6mm from case ) 10 lbfyin (1.1Nym) Thermal Resistance Parameter RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient Typ. Max. 4.28 40 110 Units C/W i --- --- --- HEXFET(R) is a registered trademark of International Rectifier. www.irf.com 1 12/06/04 IRFR/U120ZPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 100 --- --- 2.0 16 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.084 150 --- --- --- --- --- --- 6.9 1.6 3.1 8.3 26 27 23 4.5 7.5 310 41 24 150 26 57 --- --- 190 4.0 --- 20 250 200 -200 10 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 5.2A V VDS = VGS, ID = 250A S VDS = 25V, ID = 5.2A A VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V ID = 5.2A nC VDS = 80V VGS = 10V VDD = 50V ID = 5.2A ns RG = 53 VGS = 10V D Between lead, e e e nH 6mm (0.25in.) from package G pF S and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 80V, = 1.0MHz VGS = 0V, VDS = 0V to 80V f Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- --- 24 23 8.7 A 35 1.3 36 35 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 5.2A, VGS = 0V TJ = 25C, IF = 5.2A, VDD = 50V di/dt = 100A/s e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFR/U120ZPbF 100 TOP VGS 100 TOP ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 1 4.5V 1 0.1 4.5V 60s PULSE WIDTH Tj = 25C 60s PULSE WIDTH Tj = 175C 0.1 0.1 0 1 1 10 10 100 100 0.01 0.1 0 1 1 10 10 100 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.0 12 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current () 10 8 6 T J = 175C 10.0 T J = 175C T J = 25C 1.0 T J = 25C VDS = 25V 60s PULSE WIDTH 4 2 0 0 2 4 6 8 ID, Drain-to-Source Current (A) 0.1 4.0 5.0 6.0 7.0 8.0 VDS = 10V 380s PULSE WIDTH VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com 3 IRFR/U120ZPbF 500 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 20 ID= 5.2A VGS, Gate-to-Source Voltage (V) 400 16 C, Capacitance (pF) VDS= 80V VDS= 50V VDS= 20V Ciss 300 12 200 8 100 4 FOR TEST CIRCUIT SEE FIGURE 13 Coss Crss 0 1 10 100 0 0 2 4 6 8 10 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100.0 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 10.0 T J = 175C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100sec 1 Tc = 25C Tj = 175C Single Pulse 1 10 1msec 10msec 100 1000 1.0 T J = 25C VGS = 0V 0.1 0.0 0.5 1.0 1.5 VSD, Source-toDrain Voltage (V) 0.1 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U120ZPbF 10 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) 8 ID = 5.2A VGS = 10V 2.5 ID , Drain Current (A) 6 2.0 4 1.5 2 1.0 0 25 50 75 100 125 150 175 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) T J , Junction Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 J J 1 R1 R1 2 R2 R2 R3 R3 3 C 3 Ri (C/W) i (sec) 0.33747 0.000053 1.793 2.150 0.000125 0.000474 0.1 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 1 2 Ci= i/Ri Ci= i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.01 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U120ZPbF 80 EAS, Single Pulse Avalanche Energy (mJ) 15V VDS L DRIVER 60 ID 0.9A 1.2 BOTTOM 5.2A TOP RG 20V VGS D.U.T IAS tp + V - DD A 40 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 20 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS VG QGD VGS(th) Gate threshold Voltage (V) 5.0 4.0 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. ID = 250A 3.0 50K 12V .2F .3F D.U.T. VGS 3mA + V - DS 2.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature 6 www.irf.com IRFR/U120ZPbF 10 Duty Cycle = Single Pulse 0.01 Avalanche Current (A) 1 0.05 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.1 0.01 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 20 EAR , Avalanche Energy (mJ) 16 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 5.2A 12 8 4 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com 7 IRFR/U120ZPbF Driver Gate Drive D.U.T + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs RD V DS VGS RG 10V Pulse Width 1 s Duty Factor 0.1 % D.U.T. + -VDD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRFR/U120ZPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRF R120 WIT H ASS EMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 1999 IN T HE ASS EMBLY LINE "A" Note: "P" in as sembly line position indicates "Lead-Free" PART NUMBER INTERNAT IONAL RECT IF IER LOGO IRFU120 916A 12 34 ASS EMBLY LOT CODE DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INTERNAT IONAL RECT IFIER LOGO IRFU120 12 34 DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = ASS EMBLY SIT E CODE ASS EMBLY LOT CODE www.irf.com 9 IRFR/U120ZPbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRF U120 WITH ASSEMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 1999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 919A 56 78 ASSEMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNAT IONAL RECTIFIER LOGO PART NUMBER IRFU120 56 78 AS SEMBLY LOT CODE DATE CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 19 A = ASS EMBLY SIT E CODE 10 www.irf.com IRFR/U120ZPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 1.29mH Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive RG = 25, IAS = 5.2A, VGS =10V. Part not avalanche performance. recommended for use above this value. This value determined from sample failure population. 100% Pulse width 1.0ms; duty cycle 2%. tested to this value in production. When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Repetitive rating; pulse width limited by Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site. Notes: IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04 www.irf.com 11 |
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